Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995
Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach.
- Research Organization:
- Michigan Univ., Ann Arbor, MI (United States). Dept. of Nuclear Engineering
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG08-94NV11630
- OSTI ID:
- 111840
- Report Number(s):
- DOE/NV/11630-T1; ON: DE96001130; TRN: 95:022228
- Resource Relation:
- Other Information: PBD: Jul 1995
- Country of Publication:
- United States
- Language:
- English
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