Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995
Abstract
Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach.
- Authors:
- Publication Date:
- Research Org.:
- Michigan Univ., Ann Arbor, MI (United States). Dept. of Nuclear Engineering
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 111840
- Report Number(s):
- DOE/NV/11630-T1
ON: DE96001130; TRN: 95:022228
- DOE Contract Number:
- FG08-94NV11630
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: PBD: Jul 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; SEMICONDUCTOR DETECTORS; RESEARCH PROGRAMS; PROGRESS REPORT; GAMMA DETECTION; GALLIUM ARSENIDES; CADMIUM TELLURIDES; ZINC TELLURIDES
Citation Formats
Knoll, G F. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995. United States: N. p., 1995.
Web. doi:10.2172/111840.
Knoll, G F. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995. United States. https://doi.org/10.2172/111840
Knoll, G F. 1995.
"Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995". United States. https://doi.org/10.2172/111840. https://www.osti.gov/servlets/purl/111840.
@article{osti_111840,
title = {Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995},
author = {Knoll, G F},
abstractNote = {Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach.},
doi = {10.2172/111840},
url = {https://www.osti.gov/biblio/111840},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 1995},
month = {Sat Jul 01 00:00:00 EDT 1995}
}