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Title: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

Abstract

Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach.

Authors:
Publication Date:
Research Org.:
Michigan Univ., Ann Arbor, MI (United States). Dept. of Nuclear Engineering
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
111840
Report Number(s):
DOE/NV/11630-T1
ON: DE96001130; TRN: 95:022228
DOE Contract Number:  
FG08-94NV11630
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Jul 1995
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; SEMICONDUCTOR DETECTORS; RESEARCH PROGRAMS; PROGRESS REPORT; GAMMA DETECTION; GALLIUM ARSENIDES; CADMIUM TELLURIDES; ZINC TELLURIDES

Citation Formats

Knoll, G F. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995. United States: N. p., 1995. Web. doi:10.2172/111840.
Knoll, G F. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995. United States. https://doi.org/10.2172/111840
Knoll, G F. 1995. "Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995". United States. https://doi.org/10.2172/111840. https://www.osti.gov/servlets/purl/111840.
@article{osti_111840,
title = {Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995},
author = {Knoll, G F},
abstractNote = {Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach.},
doi = {10.2172/111840},
url = {https://www.osti.gov/biblio/111840}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 1995},
month = {Sat Jul 01 00:00:00 EDT 1995}
}