Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Signal generation in CdZnTe strip detectors

Journal Article · · IEEE Transactions on Nuclear Science
DOI:https://doi.org/10.1109/23.507077· OSTI ID:277696
 [1];  [2];  [3]; ; ;  [4];  [5]
  1. Univ. de Montreal, Quebec (Canada)
  2. Univ. of New Hampshire, Durham, NH (United States)
  3. Orbital Sciences Corp., Greenbelt, MD (United States)
  4. NASA Goddard Space Flight Center, Greenbelt, MD (United States)
  5. DIGIRAD, San Diego, CA (United States)
The energy resolution of CdTe and CdZnTe detectors is usually limited by the poor transport properties of holes. Devices segmented into small pixels have been observed to exhibit improved energy resolutions. Simulations have shown that this small pixel effect is due to the fact that small pixels are mostly sensitive to carriers moving close to the pixel, within a distance of the order of the pixel size. In this paper, signals are calculated for CdZnTe strip detectors in order to determine to what extent a similar small electrode effect is produced by strips. The free carrier density distributions following the absorption of a {gamma}-ray are calculated by solving the continuity equations. Combined with the strip weighting field, this provides the signal induced in the strip. Simulations are made for various detector geometries and for both the anode and cathode strips. Simulated signals are compared with actual signals measured on CdZnTe detectors.
OSTI ID:
277696
Report Number(s):
CONF-951073--
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English