Optical devices featuring nonpolar textured semiconductor layers

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

Optical devices featuring nonpolar textured semiconductor layers

Patent · Tue Nov 26 04:00:00 EST 2013

OSTI ID:1109087

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Research Organization:: Boston University, Boston, MA, USA

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-04NT42275

Assignee:: Trustees of Boston University (Boston, MA)

Patent Number(s):: 8,592,800

Application Number:: 12/920,391

OSTI ID:: 1109087

Country of Publication:: United States

Language:: English

References (7)

Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes Windisch, R.; Rooman, C.; Dutta, B. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2 https://doi.org/10.1109/2944.999177	journal	January 2002
Molecular-Scale Mlcroporous Superlattices Deckman, H. W.; Abeles, B.; Dunsmuir, J. H. MRS Bulletin, Vol. 12, Issue 1 https://doi.org/10.1557/S0883769400068718	journal	February 1987
High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy Tadatomo, Kazuyuki; Okagawa, Hiroaki; Ohuchi, Youichiro Japanese Journal of Applied Physics, Vol. 40, Issue Part 2, No. 6B https://doi.org/10.1143/JJAP.40.L583	journal	June 2001
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode Yamada, Motokazu; Mitani, Tomotsugu; Narukawa, Yukio Japanese Journal of Applied Physics, Vol. 41, Issue Part 2, No. 12B https://doi.org/10.1143/JJAP.41.L1431	journal	December 2002
Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array Sun, Ching-Cherng Optical Engineering, Vol. 43, Issue 8 https://doi.org/10.1117/1.1768943	journal	August 2004
Outlook for high efficiency solar cells to be used with and without concentration Sharma, V. K.; Colangelo, A.; Spagna, G. Energy Conversion and Management, Vol. 36, Issue 4 https://doi.org/10.1016/0196-8904(94)00066-9	journal	April 1995
30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes Schnitzer, I.; Yablonovitch, E.; Caneau, C. Applied Physics Letters, Vol. 63, Issue 16 https://doi.org/10.1063/1.110575	journal	October 1993

Similar Records

Optical devices featuring textured semiconductor layers

Patent · Tue Aug 07 00:00:00 EDT 2012 · OSTI ID:1063967

Optical devices featuring textured semiconductor layers

Patent · Tue Oct 11 00:00:00 EDT 2011 · OSTI ID:1028989

Infrared emitting device and method

Patent · Tue Dec 31 23:00:00 EST 1996 · OSTI ID:870928

Related Subjects

36 MATERIALS SCIENCE

Optical devices featuring nonpolar textured semiconductor layers

Citation Formats

References (7)

Similar Records

Related Subjects