Optical devices featuring textured semiconductor layers

Moustakas, Theodore D; Cabalu, Jasper S

Optical devices featuring textured semiconductor layers

Patent · Tue Oct 11 04:00:00 EDT 2011

OSTI ID:1028989

Moustakas, Theodore D ^[1]; Cabalu, Jasper S ^[2]

Dover, MA
Cary, NC

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Research Organization:: National Energy Technology Laboratory (NETL), Pittsburgh, PA, and Morgantown, WV (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-04NT42275

Assignee:: The Trustees of Boston University (Boston, MA)

Patent Number(s):: 8,035,113

Application Number:: 11/590,687

OSTI ID:: 1028989

Country of Publication:: United States

Language:: English

References (7)

Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes Windisch, R.; Rooman, C.; Dutta, B. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2 https://doi.org/10.1109/2944.999177	journal	January 2002
Molecular-Scale Mlcroporous Superlattices Deckman, H. W.; Abeles, B.; Dunsmuir, J. H. MRS Bulletin, Vol. 12, Issue 1 https://doi.org/10.1557/S0883769400068718	journal	February 1987
High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy Tadatomo, Kazuyuki; Okagawa, Hiroaki; Ohuchi, Youichiro Japanese Journal of Applied Physics, Vol. 40, Issue Part 2, No. 6B https://doi.org/10.1143/JJAP.40.L583	journal	June 2001
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode Yamada, Motokazu; Mitani, Tomotsugu; Narukawa, Yukio Japanese Journal of Applied Physics, Vol. 41, Issue Part 2, No. 12B https://doi.org/10.1143/JJAP.41.L1431	journal	December 2002
Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array Sun, Ching-Cherng Optical Engineering, Vol. 43, Issue 8 https://doi.org/10.1117/1.1768943	journal	August 2004
Outlook for high efficiency solar cells to be used with and without concentration Sharma, V. K.; Colangelo, A.; Spagna, G. Energy Conversion and Management, Vol. 36, Issue 4 https://doi.org/10.1016/0196-8904(94)00066-9	journal	April 1995
30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes Schnitzer, I.; Yablonovitch, E.; Caneau, C. Applied Physics Letters, Vol. 63, Issue 16 https://doi.org/10.1063/1.110575	journal	October 1993

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