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Rutherford forward scattering and elastic recoil detection (RFSERD) as a method for characterizing ultra-thin films

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms

We present a novel ion beam analysis technique combining Rutherford forward scattering and elastic recoil detection (RFSERD) and demonstrate its ability to increase efficiency in determining stoichiometry in ultrathin (5-50 nm) films as compared to Rutherford backscattering. In the conventional forward geometries, scattering from the substrate overwhelms the signal from light atoms but in RFSERD, scattered ions from the substrate are ranged out while forward scattered ions and recoiled atoms from the thin film are simultaneously detected in a single detector. Lastly, the technique is applied to tantalum oxide memristors but can be extended to a wide range of materials systems.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1106565
Alternate ID(s):
OSTI ID: 1106777
OSTI ID: 22423020
Report Number(s):
SAND2013--5614J; PII: S0168583X1400295X
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Vol. 332; ISSN 0168-583X
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (19)

Characterization of thin films using heavy ion beams journal May 1999
A review of high energy backscattering spectrometry journal November 1996
Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors journal February 2012
Memristive devices for computing journal January 2013
Semi-empirical formulas for heavy-ion stripping data journal January 1977
A physical model of switching dynamics in tantalum oxide memristive devices journal June 2013
Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region” journal August 2013
Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching journal October 2013
The importance of screening corrections in accurate RBS measurements at MeV energies journal January 1980
Measurement of the oxygen content in high-Tcsuperconductors: Enhanced resonant ion-scattering analysis journal October 1988
Elastic scattering phenomenological analysis of the first resonant structure of theSi28+O16system journal January 1984
Metal–Oxide RRAM journal June 2012
Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications
  • Stevens, James E.; Lohn, Andrew J.; Decker, Seth A.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2, Article No. 021501 https://doi.org/10.1116/1.4828701
journal March 2014
Ion beam analysis for depth profiling
  • Knapp, J. A.; Barbour, J. C.; Doyle, B. L.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, Issue 4 https://doi.org/10.1116/1.577959
journal July 1992
Characterization of thin films using heavy ion beams journal May 1999
A review of high energy backscattering spectrometry journal November 1996
Measurement of the oxygen content in high-Tcsuperconductors: Enhanced resonant ion-scattering analysis journal October 1988
Elastic scattering phenomenological analysis of the first resonant structure of theSi28+O16system journal January 1984
Metal–Oxide RRAM journal June 2012