Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field
Journal Article
·
· Physical Review B
Not Available
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1101575
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 16 Vol. 86; ISSN 1098-0121; ISSN PRBMDO
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots
Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting
Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence
Journal Article
·
Mon Sep 21 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22482139
Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting
Journal Article
·
Sun Dec 21 19:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:1226635
Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence
Journal Article
·
Sun Dec 08 23:00:00 EST 2013
· Applied Physics Letters
·
OSTI ID:22253855