Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

Journal Article · Mon Sep 21 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4931360· OSTI ID:22482139

Ghali, Mohsen ^[1]; Ohno, Yuzo; Ohno, Hideo ^[1]

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1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30 kV/cm.

• OSTI ID: 22482139
• Journal Information: Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ELECTRIC FIELDS
EXCITED STATES
EXCITONS
FINE STRUCTURE
GALLIUM ARSENIDES
QUANTUM DOTS
QUANTUM WELLS
SCHOTTKY BARRIER DIODES
SUBSTRATES