Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Yerino, Christopher D.; Simmonds, Paul J.; Liang, Baolai; Jung, Daehwan; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Huffaker, Diana L.; Höfling, Sven; Kamp, Martin; Lee, Minjoo Larry

doi:10.1063/1.4904944

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Journal Article · Mon Dec 22 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904944· OSTI ID:1226635

Yerino, Christopher D. ^[1]; ^[2]; Liang, Baolai ^[3]; Jung, Daehwan ^[1]; Schneider, Christian ^[4]; Unsleber, Sebastian ^[4]; ^[4]; Huffaker, Diana L. ^[3]; Höfling, Sven ^[5]; Kamp, Martin ^[4]; Lee, Minjoo Larry ^[1]

Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
Departments of Physics and Materials Science and Engineering, Boise State University, Boise, Idaho 83725, USA
California NanoSystems Institute and Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany, SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, United Kingdom

Not Available

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-06OR23100

OSTI ID:: 1226635

Alternate ID(s):: OSTI ID: 22395579

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 105; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (29)

Site-Controlled InGaAs Quantum Dots with Tunable Emission Energy Felici, Marco; Gallo, Pascal; Mohan, Arun Small, Vol. 5, Issue 8 https://doi.org/10.1002/smll.200801274	journal	April 2009
Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy Watanabe, Katsuyuki; Tsukamoto, Shiro; Gotoh, Yoshihiko Journal of Crystal Growth, Vol. 227-228 https://doi.org/10.1016/S0022-0248(01)00991-5	journal	July 2001
Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates Nosho, B. Z.; Bennett, B. R.; Aifer, E. H. Journal of Crystal Growth, Vol. 236, Issue 1-3 https://doi.org/10.1016/S0022-0248(01)02392-2	journal	March 2002
Size-shrinkage effect of InAs quantum dots during a GaAs capping growth Yamaguchi, Koichi; Saito, Yoshikuni; Ohtsubo, Ryou Applied Surface Science, Vol. 190, Issue 1-4 https://doi.org/10.1016/S0169-4332(01)00864-9	journal	May 2002
Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain Simmonds, Paul J.; Yerino, Christopher D.; Sun, Meng ACS Nano, Vol. 7, Issue 6 https://doi.org/10.1021/nn400395y	journal	May 2013
A semiconductor source of triggered entangled photon pairs Stevenson, R. M.; Young, R. J.; Atkinson, P. Nature, Vol. 439, Issue 7073 https://doi.org/10.1038/nature04446	journal	January 2006
Ultrabright source of entangled photon pairs Dousse, Adrien; Suffczyński, Jan; Beveratos, Alexios Nature, Vol. 466, Issue 7303 https://doi.org/10.1038/nature09148	journal	July 2010
Semiconductor quantum light sources Shields, Andrew J. Nature Photonics, Vol. 1, Issue 4 https://doi.org/10.1038/nphoton.2007.46	journal	April 2007
Towards quantum-dot arrays of entangled photon emitters Juska, Gediminas; Dimastrodonato, Valeria; Mereni, Lorenzo O. Nature Photonics, Vol. 7, Issue 7 https://doi.org/10.1038/nphoton.2013.128	journal	May 2013
Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces Leonard, D.; Krishnamurthy, M.; Reaves, C. M. Applied Physics Letters, Vol. 63, Issue 23 https://doi.org/10.1063/1.110199	journal	December 1993
Line broadening caused by Coulomb carrier–carrier correlations and dynamics of carrier capture and emission in quantum dots Uskov, A. V.; Magnusdottir, I.; Tromborg, B. Applied Physics Letters, Vol. 79, Issue 11 https://doi.org/10.1063/1.1401778	journal	September 2001
On-demand single-photon source for 1.3μm telecom fiber Ward, M. B.; Karimov, O. Z.; Unitt, D. C. Applied Physics Letters, Vol. 86, Issue 20 https://doi.org/10.1063/1.1922573	journal	May 2005
Single-photon emission from InGaAs quantum dots grown on (111) GaAs Stock, Erik; Warming, Till; Ostapenko, Irina Applied Physics Letters, Vol. 96, Issue 9 https://doi.org/10.1063/1.3337097	journal	March 2010
Self-assembly on (111)-oriented III-V surfaces Simmonds, Paul J.; Larry Lee, Minjoo Applied Physics Letters, Vol. 99, Issue 12 https://doi.org/10.1063/1.3640501	journal	September 2011
Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots Treu, J.; Schneider, C.; Huggenberger, A. Applied Physics Letters, Vol. 101, Issue 2 https://doi.org/10.1063/1.4733664	journal	July 2012
Tensile-strained growth on low-index GaAs Simmonds, Paul J.; Larry Lee, Minjoo Journal of Applied Physics, Vol. 112, Issue 5 https://doi.org/10.1063/1.4749407	journal	September 2012
Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Yerino, Christopher D.; Simmonds, Paul J.; Liang, Baolai Applied Physics Letters, Vol. 105, Issue 7 https://doi.org/10.1063/1.4893747	journal	August 2014
Critical layer thickness for self-assembled InAs islands on GaAs Leonard, D.; Pond, K.; Petroff, P. M. Physical Review B, Vol. 50, Issue 16 https://doi.org/10.1103/PhysRevB.50.11687	journal	October 1994
Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A Yamaguchi, H.; Belk, J. G.; Zhang, X. M. Physical Review B, Vol. 55, Issue 3 https://doi.org/10.1103/PhysRevB.55.1337	journal	January 1997
Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111) Raviswaran, Arvind; Liu, Chuan-Pu; Kim, Jaichan Physical Review B, Vol. 63, Issue 12 https://doi.org/10.1103/PhysRevB.63.125314	journal	March 2001
Growth and characterization of InAs epitaxial layer on Ga As ( 111 ) B Wen, H.; Wang, Zh. M.; Shultz, J. L. Physical Review B, Vol. 70, Issue 20 https://doi.org/10.1103/PhysRevB.70.205307	journal	November 2004
In(Ga)As/GaAs quantum dots grown on a (111) surface as ideal sources of entangled photon pairs Schliwa, Andrei; Winkelnkemper, Momme; Lochmann, Anatol Physical Review B, Vol. 80, Issue 16 https://doi.org/10.1103/PhysRevB.80.161307	journal	October 2009
Nanowire Quantum Dots as an Ideal Source of Entangled Photon Pairs Singh, Ranber; Bester, Gabriel Physical Review Letters, Vol. 103, Issue 6 https://doi.org/10.1103/PhysRevLett.103.063601	journal	August 2009
Regulated and Entangled Photons from a Single Quantum Dot Benson, Oliver; Santori, Charles; Pelton, Matthew Physical Review Letters, Vol. 84, Issue 11 https://doi.org/10.1103/PhysRevLett.84.2513	journal	March 2000
Triggered Single Photons from a Quantum Dot Santori, Charles; Pelton, Matthew; Solomon, Glenn Physical Review Letters, Vol. 86, Issue 8 https://doi.org/10.1103/PhysRevLett.86.1502	journal	February 2001
Size-Dependent Fine-Structure Splitting in Self-Organized InAs / GaAs Quantum Dots Seguin, R.; Schliwa, A.; Rodt, S. Physical Review Letters, Vol. 95, Issue 25 https://doi.org/10.1103/PhysRevLett.95.257402	journal	December 2005
Entangled Photon Pairs from Semiconductor Quantum Dots Akopian, N.; Lindner, N. H.; Poem, E. Physical Review Letters, Vol. 96, Issue 13 https://doi.org/10.1103/PhysRevLett.96.130501	journal	April 2006
Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting Mano, Takaaki; Abbarchi, Marco; Kuroda, Takashi Applied Physics Express, Vol. 3, Issue 6 https://doi.org/10.1143/APEX.3.065203	journal	May 2010
Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy Watanabe, Katsuyuki; Koguchi, Nobuyuki; Gotoh, Yoshihiko Japanese Journal of Applied Physics, Vol. 39, Issue Part 2, No. 2A https://doi.org/10.1143/JJAP.39.L79	journal	February 2000

Similar Records

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Journal Article · Sun Dec 21 23:00:00 EST 2014 · Applied Physics Letters · OSTI ID:22395579

Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field

Journal Article · Tue Oct 09 20:00:00 EDT 2012 · Physical Review B · OSTI ID:1101575

Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence

Journal Article · Sun Dec 08 23:00:00 EST 2013 · Applied Physics Letters · OSTI ID:22253855

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Citation Formats

References (29)

Similar Records

Related Subjects