Semi-polar GaN materials technology for high IQE green LEDs.

Technical Report · Sat Jun 01 00:00:00 EDT 2013

DOI:https://doi.org/10.2172/1089987· OSTI ID:1089987

Koleske, Daniel; Lee, Stephen Roger; Crawford, Mary H; Coltrin, Michael Elliott; Fini, Paul

The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Inlustra Technologies Inc.,, Santa Barbara, CA
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1089987
• Report Number(s): SAND2013-5065; 456865
• Country of Publication: United States
• Language: English