Dynamics of carrier injection through V-defects in long wavelength GaN LEDs (in EN)
The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar 101¯1 QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm2/s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.
- Research Organization:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- EE0009691
- OSTI ID:
- 2578530
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 124; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- EN
Similar Records
Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs
Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence