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Title: Semi-polar GaN materials technology for high IQE green LEDs.

Abstract

The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Inlustra Technologies Inc.,, Santa Barbara, CA
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1089987
Report Number(s):
SAND2013-5065
456865
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English

Citation Formats

Koleske, Daniel, Lee, Stephen Roger, Crawford, Mary H, Coltrin, Michael Elliott, and Fini, Paul. Semi-polar GaN materials technology for high IQE green LEDs.. United States: N. p., 2013. Web. doi:10.2172/1089987.
Koleske, Daniel, Lee, Stephen Roger, Crawford, Mary H, Coltrin, Michael Elliott, & Fini, Paul. Semi-polar GaN materials technology for high IQE green LEDs.. United States. https://doi.org/10.2172/1089987
Koleske, Daniel, Lee, Stephen Roger, Crawford, Mary H, Coltrin, Michael Elliott, and Fini, Paul. 2013. "Semi-polar GaN materials technology for high IQE green LEDs.". United States. https://doi.org/10.2172/1089987. https://www.osti.gov/servlets/purl/1089987.
@article{osti_1089987,
title = {Semi-polar GaN materials technology for high IQE green LEDs.},
author = {Koleske, Daniel and Lee, Stephen Roger and Crawford, Mary H and Coltrin, Michael Elliott and Fini, Paul},
abstractNote = {The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.},
doi = {10.2172/1089987},
url = {https://www.osti.gov/biblio/1089987}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jun 01 00:00:00 EDT 2013},
month = {Sat Jun 01 00:00:00 EDT 2013}
}