300 Degree C GaN/AlGaN Heterojunction Bipolar Transistor
Journal Article
·
· MRS Internet Nitride Journal
OSTI ID:1086
A GaN/AIGaN heterojunction bipolar transistor has been fabricated using C12/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250oC), the device shows improved gain. Future efforts which are briefly summarized. should focus on methods for reducing base resistance.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1086
- Report Number(s):
- SAND98-2309J; ON: DE00001086
- Journal Information:
- MRS Internet Nitride Journal, Journal Name: MRS Internet Nitride Journal
- Country of Publication:
- United States
- Language:
- English
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