Silicon metal-semiconductor-metal photodetector

Patent · Tue Sep 12 00:00:00 EDT 1995

OSTI ID:106687

Brueck, S R.J.; Myers, D R; Sharma, A K

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode. 4 figs.

• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 5,449,945/A/
• Application Number: PAN: 8-004,803
• OSTI ID: 106687
• Resource Relation: Other Information: PBD: 12 Sep 1995
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
PHOTODIODES
DESIGN
VISIBLE RADIATION
NEAR INFRARED RADIATION
SEMICONDUCTOR DEVICES