Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Electronic structure of YbGa1.15Si0:85 and YbGaxGe2-x probed by resonant x-ray emission and photoelectron spectroscopies

Journal Article · · Phys. Rev. B
 [1];  [2];  [3];  [3];  [4];  [5];  [6];  [7];  [7];  [7];  [7];  [1];  [8];  [8];  [9];  [9];  [9]
  1. RIKEN, Hyogo (Japan)
  2. Japan Atomic Energy Agency (JAEA), Tokai (Japan)
  3. National Inst. for Materials Science (NIMS), Tsukuba (Japan)
  4. Univ. of Texas, Austin, TX (United States)
  5. Inst. for Molecular Science, Okazaki (Japan)
  6. Okayama Univ. (Japan)
  7. Hiroshima Univ. (Japan)
  8. Japan Synchrotron Research Inst., Hyogo (Japan)
  9. National Synchrotron Radiation Research Center, Hsinchu (Taiwan)
We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa 1.15 Si 0.85 and nonsuperconducting ternary germanide YbGax Ge2-x (x = 1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa1.15 Si0.85 no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7–300 K, while the valence shows a drastic increase under pressure from the Yb2+ state partially including itinerant electrons to the localized Yb3+ state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa1.15 Si0.85 and YbGax Ge2-x , which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa1.15 Si0.85 and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.
Research Organization:
Energy Frontier Research Centers (EFRC); Energy Frontier Research in Extreme Environments (EFree)
Sponsoring Organization:
USDOE SC Office of Basic Energy Sciences (SC-22)
DOE Contract Number:
SC0001057
OSTI ID:
1065310
Journal Information:
Phys. Rev. B, Journal Name: Phys. Rev. B Journal Issue: 10 Vol. 83
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English