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Electronic structure of YbGa 1.15 Si 0.85 and YbGa x Ge 2-x probed by resonant x-ray emission and photoelectron spectroscopies

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa 1 . 15 Si 0 . 85 and nonsuperconducting ternary germanide YbGa x Ge 2 - x ( x =1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa 1 . 15 Si 0 . 85 no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7–300 K, while the valence shows a drastic increase under pressure from the Yb 2 + state partially including itinerant electrons to the localized Yb 3 + state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa 1 . 15 Si 0 . 85 and YbGa x Ge 2 - x , which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa 1 . 15 Si 0 . 85 and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.
Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree)
Sponsoring Organization:
USDOE SC Office of Basic Energy Sciences (SC-22)
DOE Contract Number:
SC0001057
OSTI ID:
1380587
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 10 Vol. 83; ISSN 1098-0121; ISSN PRBMDO
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

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