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Title: Enhancing crystallinity of C60 layer by thickness-control of underneath pentacene layer for high mobility C60/pentacene ambipolar transistors

Journal Article · · Appl. Phys. Lett.
DOI:https://doi.org/10.1063/1.4789873· OSTI ID:1062422

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
FOREIGNDOE - BASIC ENERGY SCIENCES
OSTI ID:
1062422
Journal Information:
Appl. Phys. Lett., Vol. 102, Issue (4) ; 01, 2013
Country of Publication:
United States
Language:
ENGLISH