Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1114976
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 102 Journal Issue: 4; ISSN 0003-6951
- Publisher:
- American Institute of PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 33 works
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