Doping-Based Stabilization of the M2 Phase in Free-Standing VO2 Nanostructures at Room Temperature

Journal Article · Sun Jan 01 00:00:00 EST 2012 · Nano Letters

DOI:https://doi.org/10.1021/nl303065h· OSTI ID:1057941

Strelcov, Evgheni ^[1]; Tselev, Alexander ^[1]; Ivanov, Ilia N ^[1]; Budai, John D ^[1]; Zhang, Jie ^[2]; Tischler, Jonathan Zachary ^[1]; Kravchenko, Ivan I ^[1]; Kalinin, Sergei V ^[1]; Kolmakov, Prof. Andrei ^[2]

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1. ORNL
2. Southern Illinois University

A new high-yield method of doping VO2 nanostructures with aluminum is proposed, which renders possible stabilization of the monoclinic M2 phase in free-standing nanoplatelets in ambient conditions and opens an opportunity for realization of a purely electronic Mott Transition Field-Effect Transistor without an accompanying structural transition. The synthesized free-standing M2-phase nanostructures are shown to have very high crystallinity and an extremely sharp temperature-driven metal-insulator transition. A combination of x-ray microdiffraction, micro-Raman spectroscopy, Energy-Dispersive X-ray spectroscopy, and four-probe electrical measurements allowed thorough characterization of the doped nanostructures. Light is shed onto some aspects of the nanostructure growth, and the temperature-doping level phase diagram is established.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1057941
• Journal Information: Nano Letters, Vol. 12, Issue 12; ISSN 1530--6984
• Country of Publication: United States
• Language: English

Related Subjects

Vanadium dioxide
M2 phase
Al
doping
Mott Transition FET