Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

doi:10.1038/srep04854

Title: Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

Journal Article · Tue May 06 00:00:00 EDT 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep04854· OSTI ID:1624709

Ji, Yanda ^[1]; Zhang, Yin ^[1]; Gao, Min ^[1]; Yuan, Zhen ^[2]; Xia, Yudong ^[1]; Jin, Changqing ^[2]; Tao, Bowan ^[1]; Chen, Chonglin ^[3]; Jia, Quanxi ^[4]; Lin, Yuan ^[1]

Univ. of Electronic Science and Technology of China, Chengdu (China). State Key Lab. of Electronic Thin films and Integrated Devices
Chinese Academy of Sciences (CAS), Beijing (China). The Inst. of Physics
Univ. of Texas at San Antonio, TX (United States). Dept. of Physics and Astronomy
Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated nanotechnologies

Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1624709

Journal Information:: Scientific Reports, Vol. 4, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

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