Competing phases in epitaxial vanadium dioxide at nanoscale

Sharma, Yogesh; Holt, Martin V.; Laanait, Nouamane; Gao, Xiang; Ivanov, Ilia N.; Collins, Liam; Sohn, Changhee; Liao, Zhaoliang; Skoropata, Elizabeth; Kalinin, Sergei V.; Balke, Nina; Eres, Gyula; Ward, Thomas Z.; Lee, Ho Nyung

doi:10.1063/1.5115784

Title: Competing phases in epitaxial vanadium dioxide at nanoscale

Journal Article · Thu Aug 29 00:00:00 EDT 2019 · APL Materials

DOI:https://doi.org/10.1063/1.5115784· OSTI ID:1561644

^[1]; Holt, Martin V. ^[2];

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Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)

Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (VO₂) exhibits a strong competition between insulating and metallic phases, which is important for practical applications. However, the phase boundary undergoes a strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of nanoscale M2 phase domains in VO₂ epitaxial films under anisotropic strain relaxation. The competing phases of the films are imaged by multilength-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates the critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO₂ films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO₂ films.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE

Grant/Contract Number:: AC05-00OR22725; AC02-06CH11357

OSTI ID:: 1561644

Alternate ID(s):: OSTI ID: 1559361

Journal Information:: APL Materials, Vol. 7, Issue 8; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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