Desorption Induced Formation of Negative Nanowires in GaN

Journal Article · Wed Jun 01 04:00:00 EDT 2011 · Journal of Crystal Growth

OSTI ID:1026781

Stach, E A; Kim, B -J

We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the 1 0 {bar 1} 0 prism planes, while lateral negative nanowires grow in close-packed 1 0 {bar 1} 0 by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of the Ga droplets that catalyze their creation. These nanoscale features offer controllable templates for the creation and integration of a broad range of nanoscale materials systems, with potential applications in nanoscale fluidics.

• Research Organization: BROOKHAVEN NATIONAL LABORATORY (BNL)
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1026781
• Report Number(s): BNL--96238-2011-JA
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: 1 Vol. 324; ISSN JCRGAE; ISSN 0022-0248
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
DESORPTION
DISSOCIATION
In-situ transmission electron microscopy
MONOCRYSTALS
Nanostructure growth
Nanowire growth
PRISMS
PYROLYSIS
Solid–liquid–vapor mechanism
Solid–vapor mechanism
TRANSMISSION ELECTRON MICROSCOPY
Vapor–liquid–solid mechanism