Watching GaN nanowires grow
- LBNL Library
We report real-time transmission electron microscopy observations of the growth of GaN nanowires via a self-catalytic vapor-liquid-solid (VLS) mechanism. These nanowires nucleate and grow from Ga droplets formed during thermal decomposition of GaN at elevated temperatures in vacuum. This is the first direct observation of self-catalytic growth of nanowires via the VLS mechanism, and suggests new strategies for growth of semiconductor nanowires without unintentional doping.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director. Office of Science. Basic Energy Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 819474
- Report Number(s):
- LBNL--51659-Rev.; LBNL-51659
- Journal Information:
- Nano Letters, Journal Name: Nano Letters Journal Issue: 3 Vol. 6
- Country of Publication:
- United States
- Language:
- English
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