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Title: Optical and field emission properties of layer-structure GaN nanowires

Abstract

Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

Authors:
 [1];  [2];  [1]; ;  [1]
  1. Science School, Xi’an University of Technology, Xi’an 710048 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22420530
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 56; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON EMISSION; EMISSION SPECTRA; FIELD EMISSION; FILMS; GALLIUM NITRIDES; LAYERS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; VISIBLE RADIATION; X-RAY DIFFRACTION

Citation Formats

Cui, Zhen, School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, Li, Enling, E-mail: Lienling@xaut.edu.cn, Shi, Wei, and Ma, Deming. Optical and field emission properties of layer-structure GaN nanowires. United States: N. p., 2014. Web. doi:10.1016/J.MATERRESBULL.2014.04.014.
Cui, Zhen, School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, Li, Enling, E-mail: Lienling@xaut.edu.cn, Shi, Wei, & Ma, Deming. Optical and field emission properties of layer-structure GaN nanowires. United States. doi:10.1016/J.MATERRESBULL.2014.04.014.
Cui, Zhen, School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, Li, Enling, E-mail: Lienling@xaut.edu.cn, Shi, Wei, and Ma, Deming. Fri . "Optical and field emission properties of layer-structure GaN nanowires". United States. doi:10.1016/J.MATERRESBULL.2014.04.014.
@article{osti_22420530,
title = {Optical and field emission properties of layer-structure GaN nanowires},
author = {Cui, Zhen and School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048 and Li, Enling, E-mail: Lienling@xaut.edu.cn and Shi, Wei and Ma, Deming},
abstractNote = {Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.},
doi = {10.1016/J.MATERRESBULL.2014.04.014},
journal = {Materials Research Bulletin},
number = ,
volume = 56,
place = {United States},
year = {Fri Aug 15 00:00:00 EDT 2014},
month = {Fri Aug 15 00:00:00 EDT 2014}
}