Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links
Conference
·
OSTI ID:102409
- and others
Low-power photoreceivers based on InGaAs/InP heterojunction bipolar transistors (HBTs) and p-i-n diodes for highly-parallel optical data links have been designed, fabricated and characterized. The receivers and designed to operate from 980 nm to over 1.3 {mu}m and interface directly with 3.3 V CMOS. SPICE was utilized to investigate circuit topographies that minimize power dissipation while maintaining large signal operation required to interface directly with CMOS. Low-power dissipation of {approximately}10 mW/channel has been achieved at bit rates up to 800 Mbits/sec. Performance characteristics of discrete HBTs and of low-power photoreceivers fabricated with p-i-n/HBT circuits are reported.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 102409
- Report Number(s):
- SAND-95-1299C; CONF-951097-1; ON: DE95017549; TRN: 95:006798
- Resource Relation:
- Conference: IEEE gallium arsenide integrated circuits symposium: integrated circuits in GaAs, InP, and other compound semiconductors, San Diego, CA (United States), 29 Oct - 1 Nov 1995; Other Information: PBD: 1995
- Country of Publication:
- United States
- Language:
- English
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