Axial Ge/Si nanowire heterostructure tunnel FETs
Conference
·
OSTI ID:1023412
- Los Alamos National Laboratory
The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.
- Research Organization:
- Los Alamos National Laboratory (LANL)
- Sponsoring Organization:
- DOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1023412
- Report Number(s):
- LA-UR-10-04710; LA-UR-10-4710
- Country of Publication:
- United States
- Language:
- English
Similar Records
Axial Ge/Si nanowire heterostructure tunnel FETs.
Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs
Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Conference
·
Sun Feb 28 23:00:00 EST 2010
·
OSTI ID:990955
Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs
Conference
·
Thu Dec 31 23:00:00 EST 2009
·
OSTI ID:1023415
Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Journal Article
·
Mon Nov 07 19:00:00 EST 2022
· APL Materials
·
OSTI ID:1898359