The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process.
Conference
·
OSTI ID:1021623
- Vanderbilt University, Nashville, TN
- NSWC Crane, Crane, IN
Heavy-ion microbeam and broadbeam data are presented for a 65 nm bulk CMOS process showing the existence of pulse quenching at normal and angular incidence for designs where the pMOS transistors are in common n-wells or isolated in separate n-wells. Experimental data and simulations show that pulse quenching is more prevalent in the common n-well design than the separate n-well design, leading to significantly reduced SET pulsewidths and SET cross-section in the common n-well design.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1021623
- Report Number(s):
- SAND2010-4861C
- Country of Publication:
- United States
- Language:
- English
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