In situ X-ray Diffraction Study of Thin Film Ir/Si Solid State Reactions
The solid state reaction between a thin (30 nm) Ir film and different Si substrates (p-type Si(1 0 0), n- and p-type Si(1 1 1), silicon on insulator (SOI) and polycrystalline Si) was studied using a combination of in situ X-ray diffraction (XRD), in situ sheet resistance and laser light scattering measurements. No significant influence of either the dopants or the substrate orientation was detected as a phase formation sequence of IrSi, Ir{sub 3}Si{sub 4},Ir{sub 3}Si{sub 5} and IrSi{sub 3} was found for all samples. The presence of a thin (<4 nm) amorphous IrSi film at room temperature and its subsequent crystallization could be deduced from the appearance of a broad semi-amorphous diffraction peak in the XRD spectrum around 400 C. The results were verified using ex situ Rutherford Backscattering Spectroscopy, Scanning Electron Microscopy and 4-point probe measurements on quenched samples. The activation energy of the crystallization process and the silicide growth was determined using a Kissinger analysis on ramp anneals with different ramp rates. In addition, the influence of up to 25 volumetric % (20.5 atomic %) of Ir to the silicide formation in the Ni/Si system was studied on SOI and polycrystalline Si substrates. In the presence of Ir, the temperature range over which the low resistivity NiSi exists, is reduced both through an increase in formation temperature and an earlier consumption by the formation of NiSi{sub 2}. After the heat treatment, a continuous distribution of Ir throughout the NiSi{sub 2} phase was detected using X-ray photoelectron spectroscopy depth profiling. A low sheet resistance of < 20 {Omega}/{open_square} was maintained on both substrates up to 900 C.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- DOE - OFFICE OF SCIENCE
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1020078
- Report Number(s):
- BNL-95926-2011-JA; TRN: US201116%%61
- Journal Information:
- Microelectronic Engineering, Vol. 87, Issue 3; ISSN 0167-9317
- Country of Publication:
- United States
- Language:
- English
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High-temperature degradation of NiSi films: Agglomeration versus NiSi{sub 2} nucleation
High-Temperature Degradation of NiSi Films: Agglomeration Versus NiSi2 Nucleation
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CRYSTALLIZATION
DIFFRACTION
DISTRIBUTION
HEAT TREATMENTS
LASERS
LIGHT SCATTERING
ORIENTATION
PROBES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SILICIDES
SILICON
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
national synchrotron light source