High-temperature degradation of NiSi films: Agglomeration versus NiSi{sub 2} nucleation

Journal Article · Mon Aug 01 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2005380· OSTI ID:20714019

Deduytsche, D; Detavernier, C; Meirhaeghe, R.L. van; Lavoie, C ^[1]

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1. Vakgroep Vaste-stofwetenschappen, Ghent University, Krijgslaan 281/S1, 9000 Gent (Belgium)

The thermodynamical and morphological stability of NiSi thin films has been investigated for layers of thickness ranging from 10 to 60 nm formed on either silicon-on-insulator (SOI), polycrystalline silicon, or preannealed polycrystalline silicon substrates. The stability of the films was evaluated using in situ x-ray-diffraction, sheet resistance, and laser light-scattering measurements. For NiSi films that are thinner than 20 nm, agglomeration is the main degradation mechanism. For thicker films, the agglomeration of NiSi and nucleation of NiSi{sub 2} occur simultaneously, and both degradation mechanisms influence each other. Significant differences were observed in the degradation of the NiSi formed on different substrates. Surprisingly, agglomeration is worse on SOI substrates than on poly-Si substrates, suggesting that the texture of the NiSi film plays an important role in the agglomeration process. As expected, preannealing of the polycrystalline silicon substrate prior to metal deposition results in a significant improvement of the thermal stability of the NiSi layers.

• OSTI ID: 20714019
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AGGLOMERATION
ANNEALING
DEPOSITION
ELECTRIC CONDUCTIVITY
LASERS
LAYERS
LIGHT SCATTERING
NICKEL SILICIDES
POLYCRYSTALS
SHEETS
SILICON
SUBSTRATES
TEXTURE
THICKNESS
THIN FILMS
X-RAY DIFFRACTION