Influence of a Transient Hexagonal Phase on the Microstructure and Morphological Stability of NiSi Films

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3073750· OSTI ID:980267

Van Bockstael, C; De Keyser, K; Van Meirhaeghe, R; Detavernier, C; Jordan-Sweet, J; Lavoie, C

The morphological stability of NiSi is investigated when 40% of Si is mixed into an as deposited 10 nm Ni film. When annealing at 3?C/s, scanning electron microscopy images and in situ sheet-resistance measurements show that NiSi agglomeration is delayed by more than 100?C. In situ x-ray diffraction reveals that NiSi grows from an unusual transient hexagonal ?-nickel-silicide phase. The significant improvement of the NiSi film's morphological stability can be related to its microstructure, with large grains and a strong texture. This peculiar microstructure is compared to the microstructure of the ?-nickel-silicide precursor by electron backscattering diffraction and pole figures.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 980267
• Report Number(s): BNL--93185-2010-JA
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AGGLOMERATION
ANNEALING
BACKSCATTERING
DIFFRACTION
ELECTRONS
FILMS
MICROSTRUCTURE
NICKEL SILICIDES
PRECURSOR
SCANNING ELECTRON MICROSCOPY
STABILITY
TEXTURE
TRANSIENTS
X-RAY DIFFRACTION
national synchrotron light source