Ion implantation and dynamic recovery of tin-doped indium oxide films

Conference · Wed Sep 01 00:00:00 EDT 1993

OSTI ID:10192725

Shigesato, Yuzo; Paine, D C ^[1]; Haynes, T E ^[2]

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1. Brown Univ., Providence, RI (United States). Division of Engineering
2. Oak Ridge National Lab., TN (United States)

The effect of O{sup +} on implantation on the electronic (carrier density, mobility), resistivity and microstructural properties of thin film Sn-doped In{sub 2}O{sub 3} (ITO) was studied. Both polycrystalline (c-) and amorphous (a-) ITO thin films, 200 nm thick, were implanted at substrate temperatures ranging from {minus}196 to 300{degrees} C with 80 keV O{sup +} at doses ranging from 0 to 4.0{times}10{sup 15} cm{sup {minus}2}. X-ray diffraction studies show that polycrystalline ITO remains crystalline even after implantation with 80 keV O{sup +} at {minus}196{degrees}C to a dose of 4.0{times}10{sup 15} cm{sup {minus}2} which suggests that dynamic recovery processes are active in ITO at this low temperature. Although the x-ray diffraction pattern of the polycrystalline ITO remains unchanged with implant dose, the electrical properties were seen to degrade when implanted to a dose of 1.0{times}10{sup 15}cm{sup {minus}2} below 200{degrees}C. In contrast, amorphous ITO films remains amorphous upon ion implantation and shows almost no degradation in resistivity when implanted below 16{degrees}C. The recrystallization temperature of amorphous ITO is about 150{degrees}C in the absence of ion implantation.

• Research Organization: Oak Ridge National Lab., TN (United States); National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 10192725
• Report Number(s): CONF-9308122-14; ON: DE94001126; CNN: Grant DMR-9115054; N00014-91-J-1837; TRN: 93:004495
• Resource Relation: Conference: International Union of Materials Research Societies on advanced materials,Tokyo (Japan),31 Aug - 4 Sep 1993; Other Information: PBD: Sep 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
DOPED MATERIALS
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
THIN FILMS
ION IMPLANTATION
POLYCRYSTALS
RECRYSTALLIZATION
INDIUM OXIDES
TIN
CRYSTAL DOPING
SOLAR CELLS
TECHNOLOGY ASSESSMENT
OXYGEN IONS
360104
360102
140501
PHYSICAL PROPERTIES
STRUCTURE AND PHASE STUDIES
PHOTOVOLTAIC CONVERSION