Ion beam synthesis by tungsten-implantation into 6H-SiC
- Forschungszentrum Rossendorf e.V., Dresden (Germany)
The authors studied high-dose implantation of tungsten into 6H-silicon carbide in order to synthesize a highly conductive surface layer. Implantation was performed at 200 keV at room temperature. Subsequently, the samples were annealed in two steps at 500 C and 700 C or 950 C, respectively. The influence of dose and annealing temperature on the reaction of W with SiC was investigated. Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) contributed to study structure and composition of the layer as well as chemical states of the elements. During implantation sputtering became significant at a dose exceeding 1.0 {times} 10{sup 17} W{sup +}cm{sup {minus}2}. Formation of tungsten carbide and silicide was observed already in the as-implanted state. An annealing temperature of 950 C was necessary to crystallize tungsten carbide. However, tungsten silicide remained amorphous at this temperature. Therefore, a mixture of polycrystalline tungsten carbide and amorphous tungsten silicide evolved under these conditions. The resistivity of such a layer implanted with 1.0 {times} 10{sup 17} W{sup +} cm{sup {minus}2} and annealed at 950 C is 565 {micro}{Omega}cm.
- OSTI ID:
- 375937
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Damage behaviour and annealing of germanium implanted 6H-SiC
Ion implantation induced swelling in 6H-SiC