Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti) O{sub 3} films for optical memories

Conference · Wed Sep 01 04:00:00 EDT 1993

OSTI ID:10191057

Dimos, D; Potter, B G; Sinclair, M B; Tuttle, B A; Warren, W L

Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)0{sub 3} (PZT) and PLZT films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two types of photo-induced changes in their hysteresis behavior which are suitable for optical storage. Both types of photo-induced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photo-induced changes are reproducible and stable, which indicates that the charge traps are stable. However, improvements in photosensitivity will be required to develop a competitive technology for optical memories. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. The index changes of films have been determined using a waveguide refractometry technique, which allows the extraordinary and ordinary index changes to be obtained independently.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10191057
• Report Number(s): SAND--93-0547C; CONF-9304197--2; ON: DE93019820
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606
99 GENERAL AND MISCELLANEOUS
990300
ELECTRO-OPTICAL EFFECTS
FILMS
HYSTERESIS
INFORMATION HANDLING
MEMORY DEVICES
PHYSICAL PROPERTIES
PLZT
PZT