Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O{sub 3} films

Conference · Thu Jul 01 04:00:00 EDT 1993

OSTI ID:10176273

Dimos, D; Warren, W L; Tuttle, B A

Photo-induced changes in the hysteresis behavior of sol-gel derived Pb(Zr,Ti)O{sub 3} (PZT) and (Pb,La)(Zr,Ti)O{sub 3} (PLZT) films have been characterized. Film photosensitivity has been evaluated with respect to magnitude of effects, time response and spectral dependence. Photo-induced hysteresis changes exhibit a stretched-exponential time dependence, which implies a dispersive mechanism. The spectral dependence is strongly peaked at the band edge ({approximately} 3.4 eV), which indicates that generation of electron-hole pairs in the material is critical. The photo-induced hysteresis changes are reproducible and stable, which indicates that the controlling charge traps are stable. However, improvements in film photosensitivity will be required to develop these materials for optical memory applications.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10176273
• Report Number(s): SAND--93-0541C; CONF-930405--33; ON: DE93017496
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606
42 ENGINEERING
426000
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
ELECTRO-OPTICAL EFFECTS
FILMS
HYSTERESIS
MEMORY DEVICES
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
PLZT
PZT