Growth and Development of GaInAsP for Use in High-Efficiency Solar Cells: Final Subcontract Report, 1 July 1991 - 30 December 1993

Technical Report · Sat Oct 01 04:00:00 EDT 1994

DOI:https://doi.org/10.2172/10190116· OSTI ID:10190116

Sharps, P. R.

This report describes accomplishments during Phase 3 of this subcontract. The overall goals of the subcontract were (1) to develop the necessary technology to grow high-efficiency GaInAsP layers that are lattice-matched to GaAs and Ge; (2) to demonstrate highefficiency GaInAsP single-junction solar cells; and (3) to demonstrate GaInAsP/Ge cascade solar cells suitable for operation under concentrated (500X) sunlight. The major accomplishments during Phase 3 include (1) demonstrating a GaInAsP tunnel diode for use as an interconnect in the GaInAsP/Ge cascade cell, and (2) demonstrating a GaInAsP/Ge cascade cell. The development of the GaInAsP tunnel diode is a major accomplishment because it allows for the GaInAsP and Ge cells to be connected without optical losses for the bottom Ge cell, such as a Ge tunnel diode would cause. The GaInAsP/Ge cascade cell development is significant because of the demonstration of a cascade cell with a new materials system.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 10190116
• Report Number(s): NREL/TP-451-7166; ON: DE94000210; BR: WM1020000
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501
360601
CRYSTAL GROWTH
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDE SOLAR CELLS
GALLIUM PHOSPHIDES
GERMANIUM
INDIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDES
PHOTOVOLTAIC CONVERSION
PREPARATION AND MANUFACTURE
PROGRESS REPORT
SUBSTRATES
gallium indium arsenic phosphide
high efficiency
photovoltaics
solar cells