Development of GaInAsP for GaInAsP/Ge cascade solar cells

Conference · Tue Dec 01 04:00:00 EST 1992 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:6673981

Sharps, P R; Timmons, M L; Venkatasubramanian, R; Pickett, R; Hills, J S; Hancock, J; Hutchby, J ^[1]

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1. Research Triangle Institute, Research Triangle Park, North Carolina 27709 (United States)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.

• OSTI ID: 6673981
• Report Number(s): CONF-9205115--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 268:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CASCADE SOLAR CELLS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ENERGY GAP
EQUIPMENT
FABRICATION
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LATTICE PARAMETERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT