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U.S. Department of Energy
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Growth and Development of GaInAsP for Use in High-Efficiency Solar Cells, Annual Subcontract Report, 1 July 1991 - 30 June 1992

Technical Report ·
DOI:https://doi.org/10.2172/6635506· OSTI ID:6635506
This report describes work done during Phase II of the subcontract. Goals for Phase II include the following: (1) Optimize the GaInAsP cell on GaAs and demonstrate a 500-sun at air mass (AM) 1.5 efficiency of >23%. (2) Develop a window layer, including the evaluation of AlGaAs, GaInP, AlGaAsP, AlGaInP, and GaP. (3) Develop a front-surface contact, with a grid designed for 500-sun concentration, and a goal of a contact resistivity of [approximately]10[sup 5] ohm-cm[sup 2]. (4) Grow GaInAsP cells on Ge, with a goal of a 1-sun (AM 1.5) efficiency of >15%. Accomplishments reported herein include (1) the fabrication of p-on-n and n-on-p GaInAsP cells on GaAs, with the n-on-p cell demonstrating a 10-sun (AM 1.5) active-area efficiency of 23.4% as measured at NREL (2) the evaluation of Al[sub x]Ga([sub 1-x])As, GaInP[sub 2], and AlInP[sub 2] window layers; and (3) the fabrication of GaInAsP cells on Ge, with the demonstration of a p-on-n GaInAsP cell grown on Ge with a 1-sun (AM 1.5) active-area efficiency of 14.4%.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC36-08GO28308;
OSTI ID:
6635506
Report Number(s):
NREL/TP-451-5414; ON: DE93000098
Country of Publication:
United States
Language:
English