High power, electron-beam induced switching in diamond

Conference · Thu Jul 01 00:00:00 EDT 1993

OSTI ID:10185632

Scarpetti, R D; Hofer, W W; Kania, D R ^[1]; Schoenbach, K H; Joshi, R P; Molina, C; Brinkmann, R P ^[2]

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1. Lawrence Livermore National Lab., CA (United States)
2. Old Dominion Univ., Norfolk, VA (United States)

We are developing a high voltage, high average power, electron-beam controlled diamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 kV, and with high efficiency. This performance is due to the excellent thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchannel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beam energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 10185632
• Report Number(s): UCRL-JC--112023; CONF-930616--37; ON: DE93040535
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
DESIGN
DIAMONDS
ELECTRON BEAMS
MONTE CARLO METHOD
SEMICONDUCTOR SWITCHES
SWITCHING CIRCUITS
THIN FILMS