Process for forming one or more substantially pure layers in substrate material using ion implantation

Patent Application · Mon Dec 31 00:00:00 EST 1990

OSTI ID:10175383

Musket, R G; Brown, D W; Munir, Z A

The method comprises selecting an implantable element and a substrate material to be implanted which, at the implant/anneal temperatures, have limited mutual solubility and have no intermediate phases formed. In an example, Be is implanted with 11 {times}10{sup 17} Al/cm{sup 2} at 200 keV and then annealed for 1 h at 500 C. Rutherford backscattering shows that layer formation occurred during the anneal. SEM shows rectangular Be defects in the Al layer. Other examples of implantable elements and suitable substrate materials are tabulated. 6 figs, 1 table. (DLC)

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A7625340
• Application Number: ON: DE92019823
• OSTI ID: 10175383
• Resource Relation: Other Information: PBD: 1990
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPES AND RADIATION SOURCES
36 MATERIALS SCIENCE
ION IMPLANTATION
BERYLLIUM
LAYERS
SUBSTRATES
ALUMINIUM IONS
ION BEAMS
ANNEALING
TEMPERATURE RANGE 0400-1000 K
KEV RANGE 100-1000
SCANNING ELECTRON MICROSCOPY
CRYSTAL DEFECTS
070205
360106
INDUSTRIAL APPLICATIONS
RADIATION PROCESSING
RADIATION EFFECTS