Strain distribution in heterolayers with low misfit as revealed by convergent beam illumination methods
Conference
·
OSTI ID:10163156
- Lawrence Berkeley Lab., CA (United States)
- JEOL Ltd. (Japan)
- Tohoku Univ., Sendai (Japan). Inst. for Scientific Measurements
Convergent beam electron diffraction (CBED) was applied to the local measurement of lattice parameter across a strained interface with small mismatch. GaAs layers grown at low temperature with excess As (with 0.15% misfit) on a GaAs substrate were chosen for these studies. Tetragonal distortion was detected in the layer up to 0.5 {mu}m from the interface. With an increase of the layer thickness lowering of the symmetry of these CBED patterns was observed. This lowering of symmetry is most probably due to saturation of As solubility and the strain build into these layers.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10163156
- Report Number(s):
- LBL--34118; CONF-921101--128; ON: DE93015043; CNN: Contract AFOSR-ISSA-90-0009
- Country of Publication:
- United States
- Language:
- English
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