High efficiency light source using solid-state emitter and down-conversion material

Narendran, Nadarajah; Gu, Yimin; Freyssinier, Jean Paul

High efficiency light source using solid-state emitter and down-conversion material

Patent · Tue Oct 26 00:00:00 EDT 2010

OSTI ID:1016021

Narendran, Nadarajah ^[1]; Gu, Yimin ^[2]; Freyssinier, Jean Paul ^[2]

Clifton Park, NY
Troy, NY

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Research Organization:: Rensselaer Polytechnic Institute (Troy, NY)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-01NT41203

Assignee:: Rensselaer Polytechnic Institute (Troy, NY)

Patent Number(s):: 7,819,549

Application Number:: 10/583,105

OSTI ID:: 1016021

Country of Publication:: United States

Language:: English

References (8)

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Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup Kim, Jong Kyu; Luo, Hong; Schubert, Eric Fred Japanese Journal of Applied Physics, Vol. 44, Issue No. 21 https://doi.org/10.1143/JJAP.44.L649	journal	April 2005
Prediction of light extraction efficiency of LEDs by ray trace simulation Borbely, Akos; Johnson, Steve G. Optical Science and Technology, SPIE's 48th Annual Meeting, SPIE Proceedings https://doi.org/10.1117/12.504935	conference	January 2004
High-brightness AlGaInP light emitting diodes Vanderwater, D. A.; Tan, I. -H.; Hofler, G. E. Proceedings of the IEEE, Vol. 85, Issue 11 https://doi.org/10.1109/5.649654	journal	January 1997
Effects of Localized Heat Generations Due to the Color Conversion in Phosphor Particles and Layers of High Brightness Light Emitting Diodes Arik, Mehmet; Weaver, Stanton; Becker, Charles ASME 2003 International Electronic Packaging Technical Conference and Exhibition, 2003 International Electronic Packaging Technical Conference and Exhibition, Volume 1 https://doi.org/10.1115/IPACK2003-35015	conference	January 2009
Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes Lee, Song Jae Optical Engineering, Vol. 45, Issue 1 https://doi.org/10.1117/1.2151194	journal	January 2006
Solid-state lighting: failure analysis of white LEDs Narendran, N.; Gu, Y.; Freyssinier, J. P. Journal of Crystal Growth, Vol. 268, Issue 3-4 https://doi.org/10.1016/j.jcrysgro.2004.04.071	journal	August 2004
High-Power III-Nitride Emitters for Solid-State Lighting Krames, M. R.; Bhat, J.; Collins, D. physica status solidi (a), Vol. 192, Issue 2 https://doi.org/10.1002/1521-396X(200208)192:2<237::AID-PSSA237>3.0.CO;2-I	journal	August 2002

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