In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique

Conference · Wed Jun 01 04:00:00 EDT 1994

OSTI ID:10158974

Auciello, O ^[1]; Krauss, A R; Gruen, D M ^[2]; Lin, Y ^[2]; Chang, R P.H. ^[3]

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1. MCNC, Research Triangle Park, NC (United States). Electronics Technology Div.
2. Argonne National Lab., IL (United States)
3. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science

A new time-of-flight ion scattering and recoil spectroscopy ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO{sub 2} films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO{sub 2}/PZT/RuO{sub 2} heterostructure capacitors); (b) deposition of a Ru monolayer (?n top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer, and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 10158974
• Report Number(s): ANL/CHM/CP--81247; CONF-940411--27; ON: DE94013298; CNN: Grant N00014-93-1-0591
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPE AND RADIATION SOURCES
070205
36 MATERIALS SCIENCE
360601
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101
42 ENGINEERING
426000
ACTIVATION, NUCLEAR REACTION, RADIOMETRIC, AND RADIOCHEMICAL PROCEDURES
CAPACITORS
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
DEPOSITION
FABRICATION
FERROELECTRIC MATERIALS
INDUSTRIAL APPLICATIONS
RADIATION PROCESSING
ION BEAMS
ION SCATTERING ANALYSIS
LAYERS
MAGNESIUM OXIDES
MEMORY DEVICES
PREPARATION AND MANUFACTURE
PZT
RUTHENIUM OXIDES
SUBSTRATES