In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique
- MCNC, Research Triangle Park, NC (United States). Electronics Technology Div.
- Argonne National Lab., IL (United States)
- Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science
A new time-of-flight ion scattering and recoil spectroscopy ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO{sub 2} films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO{sub 2}/PZT/RuO{sub 2} heterostructure capacitors); (b) deposition of a Ru monolayer (?n top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer, and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 10158974
- Report Number(s):
- ANL/CHM/CP-81247; CONF-940411-27; ON: DE94013298; CNN: Grant N00014-93-1-0591
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS),San Francisco, CA (United States),4-8 Apr 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis.
Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques.
Related Subjects
07 ISOTOPES AND RADIATION SOURCES
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
42 ENGINEERING
PZT
DEPOSITION
CAPACITORS
FABRICATION
MEMORY DEVICES
FERROELECTRIC MATERIALS
ION SCATTERING ANALYSIS
SUBSTRATES
LAYERS
RUTHENIUM OXIDES
MAGNESIUM OXIDES
ION BEAMS
360601
070205
400101
426000
PREPARATION AND MANUFACTURE
INDUSTRIAL APPLICATIONS
RADIATION PROCESSING
ACTIVATION, NUCLEAR REACTION, RADIOMETRIC, AND RADIOCHEMICAL PROCEDURES
COMPONENTS
ELECTRON DEVICES AND CIRCUITS