Investigation on the long-term radiation hardness of low resistivity starting silicon materials for RT silicon detectors in high energy physics
Relatively low resistivity (200 to 1000 {Omega}-cm) starting silicon materials have been studied in the search of room temperature neutron radiation-hard silicon detectors. It has been found that, moderate resistivity (300-700 {Omega}-cm) silicon detectors, after being irradiated to 5.0 {times} 10{sup 13} to 2.0 {times} 10{sup 14} n/cm{sup 2}, are extremely stable in terms of the detector full depletion voltage (V{sub d}) or the net effective concentration of ionized space charges (N{sub eff} ---- there is little ``reverse annealing`` of N{sub eff} at RT and elevated temperatures as compared with large reverse annealing observed for high resistivity silicon detectors. Detectors with starting resistivity of 300-700 {Omega}-cm have been found to be stable, during the equivalent of one year RT anneal that would reach the saturation of the first stage of reverse anneal, within then N{sub eff} window of {vert_bar}N{sub eff}{vert_bar}{le} 2.5 {times} 10{sup 12} cm{sup {minus}3} (V{sub d} = 180 V for d = 300 {mu}m) in a working range of 5.0 {times} 10{sup 13} to 1.5 {times} 10{sup 14} n/cm{sup 2}, or a net neutron radiation tolerance of 1.0 {times} 10{sup 14} n/cm{sup 2}. The observed effects are in very good agreement with an early proposed model, which predicted among others, that there might be an off set between the reverse annealing effect and the partial annealing of the P-V centers that leads to the partial recovery of the shallow impurity donors.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10158839
- Report Number(s):
- BNL-60155; CONF-9405168-2; ON: DE94013531
- Resource Relation:
- Conference: 6. Pisa meeting on advanced detectors,Elba (Italy),22-28 May 1994; Other Information: PBD: Feb 1994
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SI SEMICONDUCTOR DETECTORS
RADIATION HARDENING
ELECTRIC CONDUCTIVITY
PHYSICAL RADIATION EFFECTS
CHARGE COLLECTION
NEUTRON FLUENCE
ANNEALING
440104
440200
HIGH ENERGY PHYSICS INSTRUMENTATION
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS