Experimental comparisons among various models for the reverse annealing of the effective concentration of ionized space charges (N{sub eff}) of neutron irradiated silicon detectors
Experimental data of the reverse annealing of the effective concentration of ionized space charges (N{sub eff}, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors has been compared with various models: compensation model (first order), cluster model of the first order, neutral to acceptor model (first order), and cluster model of the second order. Detectors irradiated to various neutron fluences have been annealed at 80{degree}C for up to 17 hours to reach the saturation of the first apparent stage of the N{sub eff} reverse anneal, which is equivalent of about one year of room temperature (RT) anneal. The anneal time constant, defined as the time at half saturation {tau}{sub {1/2}}, has been found virtually a constant ({approximately}140 minutes {plus_minus} 14%) for detectors irradiated to fluences ranging from 8.2 {times} 10{sup 12} n/cm{sup 2} to 3.2 {times} 10{sup 13} n/cm{sup 2}, which is characteristic of the first order process. The least square fit of the data to the first order models has shown a time constant of 221.7 minutes with 14% error and that to the second order model has shown a k constant of 7.3 {times} 10{sup {minus}5} s{sup {minus}1} with 37% error. The best fit, however, is a first order fit with two time constants: a short one ({approximately}44 minutes {plus_minus} 25%) with a small amplitude and a longer one ({approximately}290 minutes {plus_minus} 12%) with almost five times as larger amplitude, suggesting that even for the apparent first stage of the N{sub eff} reverse anneal, there may be two stages. There is also evidence that even after the apparent first stage anneal, there is at least another stage which is showing up in higher temperature anneal (150{degree}C).
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10154143
- Report Number(s):
- BNL-60274; CONF-941061-1; ON: DE94012618
- Resource Relation:
- Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference,Norfolk, VA (United States),30 Oct - 5 Nov 1994; Other Information: PBD: Mar 1994
- Country of Publication:
- United States
- Language:
- English
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Study of the long term stability of the effective concentration of ionized space charges (N{sub eff}) of neutron irradiated silicon detectors fabricated by various thermal oxidations
Study of the long term stability of the effective concentration of ionized space charges (N{sub eff}) of neutron irradiated silicon detectors fabricated by various thermal oxidation processes
Related Subjects
SI SEMICONDUCTOR DETECTORS
PHYSICAL RADIATION EFFECTS
SPACE CHARGE
NEUTRONS
ANNEALING
MATHEMATICAL MODELS
NEUTRON FLUENCE
NEUTRON DETECTION
440100
440200
RADIATION INSTRUMENTATION
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS