Study of short-range motion of atomic hydrogen in amorphous silicon by neutron reflectometry

Conference · Fri May 01 00:00:00 EDT 1992

OSTI ID:10158360

Dozier, W D ^[1]; Herwig, K W ^[2]; Shinar, R ^[3]; Jia, H; Shinar, J ^[4]

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1. Argonne National Lab., IL (United States)
2. Missouri Univ., Columbia, MO (United States). Research Reactor Facility
3. Iowa State Univ. of Science and Technology, Ames, IA (United States). Microelectronics Research Center
4. Ames Lab., IA (United States)

Preliminary results of neutron reflectometry (NR) measurements on rf sputter-deposited a-Si:H/a-Si:D bilayers indicate that this technique may be used to monitor H and D motions over distances of {approx} 10 to 200 {Angstrom} with a nominal resolution of 5--10 {Angstrom}. In studying rf sputter-deposited thin films containing a high density of microvoids annealed at 270 C, we found that the hydrogen diffused a distance of only {approx} 100 {Angstrom}. Further annealing at 270 and 280 C produced no additional motion. This result is consistent with a model of this system in which the hydrogen is trapped in microvoids after moving a relatively short distance.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 10158360
• Report Number(s): ANL/CP--76336; CONF-920402--36; ON: DE92016392
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602
AMORPHOUS STATE
ANNEALING
DIFFUSION
HYDROGEN
NEUTRON DIFFRACTION
SILICON
SPUTTERING
STRUCTURE AND PHASE STUDIES
VOIDS