Vapor deposition of thin films

Patent Application · Fri Oct 05 00:00:00 EDT 1990

OSTI ID:10155533

Smith, D C; Pattillo, S G; Laia, Jr, J R; Sattelberger, A P

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl){sub 3}, iridium(allyl){sub 3}, molybdenum(allyl){sub 4}, tungsten(allyl){sub 4}, rhenium (allyl){sub 4}, platinum(allyl){sub 2}, or palladium(allyl){sub 2} are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

• Research Organization: Los Alamos National Lab., NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A7593839
• Application Number: ON: DE92016533; PAN: 7-593,839
• OSTI ID: 10155533
• Resource Relation: Other Information: PBD: 5 Oct 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
THIN FILMS
CHEMICAL VAPOR DEPOSITION
METALS
INVENTIONS
ORGANOMETALLIC COMPOUNDS
GRAIN SIZE
RHODIUM
IRIDIUM
MOLYBDENUM
TUNGSTEN
RHENIUM
PLATINUM
PALLADIUM
SPECTROSCOPY
360101
PREPARATION AND FABRICATION