Heterogeneous reaction mechanisms and kinetics relevant to the CVD of semiconductor materials

Technical Report · Mon Feb 28 23:00:00 EST 1994

DOI:https://doi.org/10.2172/10146724· OSTI ID:10146724

Creighton, J R; Coltrin, M E

This report documents the state of the art in experimental and theoretical techniques for determining reaction mechanisms and chemical kinetics of heterogeneous reactions relevant to the chemical vapor deposition of semiconductor materials. It summarizes the most common ultra-high vacuum experimental techniques that are used and the types of rate information available from each. Several case studies of specific chemical systems relevant to the microelectronics industry are described. Theoretical methods for calculating heterogeneous reaction rate constants are also summarized.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10146724
• Report Number(s): SAND--94-0033; ON: DE94011001; BR: GB0103012
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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ALUMINIUM
CHEMICAL AND PHYSICOCHEMICAL PROPERTIES
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DESORPTION
HYDROGEN
MATHEMATICAL MODELS
MEASURING METHODS
PREPARATION AND MANUFACTURE
SEMICONDUCTOR MATERIALS
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SILICON OXIDES
TUNGSTEN
TUNGSTEN FLUORIDES