Determination of modeling parameters for power IGBTs under pulsed power conditions

Journal Article · Fri Jan 01 00:00:00 EST 2010

OSTI ID:1014452

Dale, Gregory E ^[1]; Van Gordon, Jim A ^[2]; Kovaleski, Scott D ^[2]

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1. Los Alamos National Laboratory
2. U. OF MISSOURI

While the power insulated gate bipolar transistor (IGRT) is used in many applications, it is not well characterized under pulsed power conditions. This makes the IGBT difficult to model for solid state pulsed power applications. The Oziemkiewicz implementation of the Hefner model is utilized to simulate IGBTs in some circuit simulation software packages. However, the seventeen parameters necessary for the Oziemkiewicz implementation must be known for the conditions under which the device will be operating. Using both experimental and simulated data with a least squares curve fitting technique, the parameters necessary to model a given IGBT can be determined. This paper presents two sets of these seventeen parameters that correspond to two different models of power IGBTs. Specifically, these parameters correspond to voltages up to 3.5 kV, currents up to 750 A, and pulse widths up to 10 {micro}s. Additionally, comparisons of the experimental and simulated data will be presented.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC52-06NA25396
• OSTI ID: 1014452
• Report Number(s): LA-UR-10-03456; LA-UR-10-3456; TRN: US201110%%910
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
IMPLEMENTATION
SIMULATION
TRANSISTORS