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Title: Determination of modeling parameters for power IGBTs under pulsed power conditions

Abstract

While the power insulated gate bipolar transistor (IGRT) is used in many applications, it is not well characterized under pulsed power conditions. This makes the IGBT difficult to model for solid state pulsed power applications. The Oziemkiewicz implementation of the Hefner model is utilized to simulate IGBTs in some circuit simulation software packages. However, the seventeen parameters necessary for the Oziemkiewicz implementation must be known for the conditions under which the device will be operating. Using both experimental and simulated data with a least squares curve fitting technique, the parameters necessary to model a given IGBT can be determined. This paper presents two sets of these seventeen parameters that correspond to two different models of power IGBTs. Specifically, these parameters correspond to voltages up to 3.5 kV, currents up to 750 A, and pulse widths up to 10 {micro}s. Additionally, comparisons of the experimental and simulated data will be presented.

Authors:
 [1];  [2];  [2]
  1. Los Alamos National Laboratory
  2. U. OF MISSOURI
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1014452
Report Number(s):
LA-UR-10-03456; LA-UR-10-3456
TRN: US201110%%910
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Journal Article
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; IMPLEMENTATION; SIMULATION; TRANSISTORS

Citation Formats

Dale, Gregory E, Van Gordon, Jim A, and Kovaleski, Scott D. Determination of modeling parameters for power IGBTs under pulsed power conditions. United States: N. p., 2010. Web.
Dale, Gregory E, Van Gordon, Jim A, & Kovaleski, Scott D. Determination of modeling parameters for power IGBTs under pulsed power conditions. United States.
Dale, Gregory E, Van Gordon, Jim A, and Kovaleski, Scott D. 2010. "Determination of modeling parameters for power IGBTs under pulsed power conditions". United States. https://www.osti.gov/servlets/purl/1014452.
@article{osti_1014452,
title = {Determination of modeling parameters for power IGBTs under pulsed power conditions},
author = {Dale, Gregory E and Van Gordon, Jim A and Kovaleski, Scott D},
abstractNote = {While the power insulated gate bipolar transistor (IGRT) is used in many applications, it is not well characterized under pulsed power conditions. This makes the IGBT difficult to model for solid state pulsed power applications. The Oziemkiewicz implementation of the Hefner model is utilized to simulate IGBTs in some circuit simulation software packages. However, the seventeen parameters necessary for the Oziemkiewicz implementation must be known for the conditions under which the device will be operating. Using both experimental and simulated data with a least squares curve fitting technique, the parameters necessary to model a given IGBT can be determined. This paper presents two sets of these seventeen parameters that correspond to two different models of power IGBTs. Specifically, these parameters correspond to voltages up to 3.5 kV, currents up to 750 A, and pulse widths up to 10 {micro}s. Additionally, comparisons of the experimental and simulated data will be presented.},
doi = {},
url = {https://www.osti.gov/biblio/1014452}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2010},
month = {Fri Jan 01 00:00:00 EST 2010}
}